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GaAs and III-V to make solar comeback on new HVPE process?

We have a variety of improvements coming out of solar over the coming years which are lined up to continue revolutionizing the technology and drive down prices, and the US National Renewable Energy Laboratory (NREL) has come out with yet another, which promises to dramatically lower cost of panels. This is more about the process of how they are built and involves a new growth technique, called dynamic hydride vapor-phase epitaxy (D-HVPE) which will open up the use of substances which exhibit higher photo voltaic effect referred to as III-V materials due to their position in the periodic table. This includes (Gallium Arsenide) GaAs and Indium Gallium Phosphte (GaInP), which have better electronic and optical properties, with higher electron mobilities…

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