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Samsung picks candidate technology to replace eFlash dead end

Samsung seems to have the answer to its next generation eFlash and has come out with embedded magnetic RAM (eMRAM) cut in 28 nanometer geometry, and says it is the first commercial product of this type using its fully-depleted silicon-on-insulator (FD-SOI) process technology. eMRAM is a non-volatile form of memory which can get embedded onto another chip, so very like eFlash, which Samsung says has “scalability problems.” Essentially by Samsung taking this step it is laying down a path for all other semi-conductor makers to follow, and it says it is cheap and that eMRAM does not require an erase cycle before writing data, its writing speed is approximately a thousand times faster than eFlash and it uses lower voltages…

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